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CP373-CTLDM303N-CT

  • CP373-CTLDM303N-CT
  • CP373-CTLDM303N-CT

CP373-CTLDM303N-CT

CP373-CTLDM303N-CT

Central Semiconductor Corp

MOSFET (Metal Oxide) N-Channel Bulk 78m Ω @ 1.8A, 2.5V 12V 590pF @ 10V 13nC @ 4.5V 30V Die

SOT-23

CP373-CTLDM303N-CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 78m Ω @ 1.8A, 2.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) 12V
RoHS Status ROHS3 Compliant
CP373-CTLDM303N-CT Product Details

CP373-CTLDM303N-CT Overview


A device's maximal input capacitance is 590pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 4.5V).

CP373-CTLDM303N-CT Features


a 30V drain to source voltage (Vdss)


CP373-CTLDM303N-CT Applications


There are a lot of Central Semiconductor Corp
CP373-CTLDM303N-CT applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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