CP591X-2N2907A-CT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CP591X-2N2907A-CT Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tray
Published
2017
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
JESD-30 Code
S-XUUC-N2
Number of Elements
1
Configuration
SINGLE
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1.6V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
200MHz
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
CP591X-2N2907A-CT Product Details
CP591X-2N2907A-CT Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.As you can see, the part has a transition frequency of 200MHz.A maximum collector current of 600mA volts is possible.
CP591X-2N2907A-CT Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA a transition frequency of 200MHz
CP591X-2N2907A-CT Applications
There are a lot of Central Semiconductor Corp CP591X-2N2907A-CT applications of single BJT transistors.