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CP591X-2N2907A-CT

CP591X-2N2907A-CT

CP591X-2N2907A-CT

Central Semiconductor Corp

CP591X-2N2907A-CT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CP591X-2N2907A-CT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTray
Published 2017
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal FormNO LEAD
JESD-30 Code S-XUUC-N2
Number of Elements 1
Configuration SINGLE
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 200MHz
Frequency - Transition 200MHz
RoHS StatusROHS3 Compliant
In-Stock:4559 items

CP591X-2N2907A-CT Product Details

CP591X-2N2907A-CT Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.As you can see, the part has a transition frequency of 200MHz.A maximum collector current of 600mA volts is possible.

CP591X-2N2907A-CT Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz

CP591X-2N2907A-CT Applications


There are a lot of Central Semiconductor Corp CP591X-2N2907A-CT applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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