MJD117RLG Overview

This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 40mA, 4A.The emitter base voltage can be kept at 5V for high efficiency.As a result, the part has a transition frequency of 25MHz.Maximum collector currents can be below 2A volts.

MJD117RLG Features

the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 25MHz

MJD117RLG Applications

There are a lot of ON Semiconductor MJD117RLG applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting