CTLDM304P-M832DS TR

new-10%

Manufacturer part number:CTLDM304P-M832DS TR

Manufacturer:Central Semiconductor Corp

Description:MOSFET 2P-CH 30V 4.2A TLM832DS

Case Package:SOT-23

Datasheet:CTLDM304P-M832DS TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mounting Type	Surface Mount
Package / Case	8-TDFN Exposed Pad
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
HTS Code	8541.29.00.95
Terminal Form	NO LEAD
Reach Compliance Code	compliant
JESD-30 Code	R-PDSO-N8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	1.65W
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	760pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.2A
Gate Charge (Qg) (Max) @ Vgs	6.4nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL
Drain Current-Max (Abs) (ID)	4.2A
Drain-source On Resistance-Max	0.07Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard