CTLDM8002A-M621H TR

new-10%

Manufacturer part number:CTLDM8002A-M621H TR

Manufacturer:Central Semiconductor Corp

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 2.5 Ω @ 500mA, 10V 20V 70pF @ 25V 0.72nC @ 4.5V 50V 6-XFDFN Exposed Pad

Case Package:SOT-23

Datasheet:CTLDM8002A-M621H TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Additional Feature	LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	compliant
Time@Peak Reflow Temperature-Max (s)	10
Pin Count	6
JESD-30 Code	R-PDSO-N6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.6W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 25V
Current - Continuous Drain (Id) @ 25°C	280mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.72nC @ 4.5V
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	20V
Drain Current-Max (Abs) (ID)	0.28A
Pulsed Drain Current-Max (IDM)	1.5A
DS Breakdown Voltage-Min	50V
RoHS Status	RoHS Compliant