SE9402 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
SE9402 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2016
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
70W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Case Connection
COLLECTOR
Power - Max
70W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 7.5A 3V
Current - Collector Cutoff (Max)
200μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 150mA, 7.5A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
1MHz
RoHS Status
Non-RoHS Compliant
SE9402 Product Details
SE9402 Overview
In this device, the DC current gain is 100 @ 7.5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 150mA, 7.5A.In this part, there is a transition frequency of 1MHz.Collector current can be as low as 10A volts at its maximum.
SE9402 Features
the DC current gain for this device is 100 @ 7.5A 3V the vce saturation(Max) is 2.5V @ 150mA, 7.5A a transition frequency of 1MHz
SE9402 Applications
There are a lot of Central Semiconductor Corp SE9402 applications of single BJT transistors.