BDW47 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BDW47 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
TIN LEAD
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection
COLLECTOR
Power - Max
85W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
2mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 50mA, 10A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
15A
Transition Frequency
4MHz
Frequency - Transition
4MHz
RoHS Status
Non-RoHS Compliant
BDW47 Product Details
BDW47 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 5A 4V DC current gain.When VCE saturation is 3V @ 50mA, 10A, transistor means Ic has reached transistors maximum value (saturated).The part has a transition frequency of 4MHz.The device exhibits a collector-emitter breakdown at 100V.
BDW47 Features
the DC current gain for this device is 1000 @ 5A 4V the vce saturation(Max) is 3V @ 50mA, 10A a transition frequency of 4MHz
BDW47 Applications
There are a lot of Rochester Electronics, LLC BDW47 applications of single BJT transistors.