Standard Recovery Rectifier SILICON NOT SPECIFIED UPPER Box
SOT-23
KBPC3516WP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Diode Element Material
SILICON
Number of Terminals
4
ECCN (US)
EAR99
Bridge Type
Single Phase
Peak Reverse Repetitive Voltage (V)
1600
Peak Average Forward Current (A)
35@Ta=50C
Peak RMS Reverse Voltage (V)
1000
Peak Non-Repetitive Forward Surge Current (A)
330
Peak Forward Voltage (V)
[email protected]
Peak Reverse Current (uA)
10
Peak Reverse Recovery Time (ns)
1500(Typ)
Minimum Operating Temperature (°C)
-50
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Automotive
AEC Qualified
Yes
Military
No
Mounting
Through Hole
Package Height
7.3
Package Length
28.6
Package Width
28.6
PCB changed
4
Package Shape
SQUARE
Manufacturer
Diotec Semiconductor AG
Packaging
Box
Part Status
Active
Additional Feature
UL RECOGNIZED
HTS Code
8541.10.00.80
Subcategory
Bridge Rectifier Diodes
Terminal Position
UPPER
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Pin Count
4
JESD-30 Code
S-PUFM-W4
Qualification Status
Not Qualified
Number of Elements
4
Configuration
Single
Diode Type
Standard Recovery Rectifier
Output Current-Max
35 A
Number of Phases
1
Rep Pk Reverse Voltage-Max
1600 V
Non-rep Pk Forward Current-Max
400 A
RoHS Status
Yes with exemptions
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.62000
$3.62
500
$3.5838
$1791.9
1000
$3.5476
$3547.6
1500
$3.5114
$5267.1
2000
$3.4752
$6950.4
2500
$3.439
$8597.5
KBPC3516WP Product Details
KBPC3516WP Overview
Datasheets indicate [email protected] as the peak forward voltage.RF diode operates efficiently wRF diodeh a peak reverse voltage range of 1000.This device can measure a maximum output voltage of 35 A.
KBPC3516WP Features
the forward peak voltage is [email protected] the peak RMS reverse voltage range of 1000 a maximum output current voltage of 35 A
KBPC3516WP Applications
There are a lot of Diotec Semiconductor AG KBPC3516WP applications of RF diodes.