MMBT2907A-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website
SOT-23
MMBT2907A-G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Element Configuration
Single
Power - Max
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1.6V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Continuous Collector Current
-600mA
Turn Off Time-Max (toff)
285ns
Turn On Time-Max (ton)
35ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.025680
$0.02568
500
$0.018882
$9.441
1000
$0.015735
$15.735
2000
$0.014436
$28.872
5000
$0.013492
$67.46
10000
$0.012550
$125.5
15000
$0.012138
$182.07
50000
$0.011935
$596.75
MMBT2907A-G Product Details
MMBT2907A-G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at -600mA in order to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.A maximum collector current of 600mA volts is possible.
MMBT2907A-G Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA the emitter base voltage is kept at -5V a transition frequency of 200MHz
MMBT2907A-G Applications
There are a lot of Comchip Technology MMBT2907A-G applications of single BJT transistors.