Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MMBT2907A-G

MMBT2907A-G

MMBT2907A-G

Comchip Technology

MMBT2907A-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website

SOT-23

MMBT2907A-G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element Configuration Single
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 200MHz
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Continuous Collector Current -600mA
Turn Off Time-Max (toff) 285ns
Turn On Time-Max (ton) 35ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.025680 $0.02568
500 $0.018882 $9.441
1000 $0.015735 $15.735
2000 $0.014436 $28.872
5000 $0.013492 $67.46
10000 $0.012550 $125.5
15000 $0.012138 $182.07
50000 $0.011935 $596.75
MMBT2907A-G Product Details

MMBT2907A-G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at -600mA in order to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.A maximum collector current of 600mA volts is possible.

MMBT2907A-G Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

MMBT2907A-G Applications


There are a lot of Comchip Technology MMBT2907A-G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News