ZTX558STZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 50mA 10V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.This device has a current rating of -200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 50MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
ZTX558STZ Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 50MHz
ZTX558STZ Applications
There are a lot of Diodes Incorporated ZTX558STZ applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
