ZTX558STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX558STZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-400V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-200mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX558
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 6mA, 50mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-200mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.480148
$0.480148
10
$0.452971
$4.52971
100
$0.427330
$42.733
500
$0.403142
$201.571
1000
$0.380322
$380.322
ZTX558STZ Product Details
ZTX558STZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 50mA 10V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.This device has a current rating of -200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 50MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
ZTX558STZ Features
the DC current gain for this device is 100 @ 50mA 10V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 6mA, 50mA the emitter base voltage is kept at -5V the current rating of this device is -200mA a transition frequency of 50MHz
ZTX558STZ Applications
There are a lot of Diodes Incorporated ZTX558STZ applications of single BJT transistors.