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C2M0040120D

C2M0040120D

C2M0040120D

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Tube 52mOhm @ 40A, 20V +25V, -10V 1893pF @ 1000V 115nC @ 20V 1200V TO-247-3

SOT-23

C2M0040120D Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Z-FET™
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Number of Channels 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Turn On Delay Time 14.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.8V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 1893pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 115nC @ 20V
Rise Time 52ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Fall Time (Typ) 34.4 ns
Turn-Off Delay Time 26.4 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 2.6V
Gate to Source Voltage (Vgs) 25V
Drain to Source Resistance 40mOhm
Height 21.1mm
Length 5.21mm
Width 16.13mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $27.943599 $27.943599
10 $26.361886 $263.61886
100 $24.869703 $2486.9703
500 $23.461985 $11730.9925
1000 $22.133948 $22133.948
C2M0040120D Product Details

C2M0040120D Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1893pF @ 1000V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 26.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 40mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.6V.The transistor must receive a 1200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (20V).

C2M0040120D Features


a continuous drain current (ID) of 60A
the turn-off delay time is 26.4 ns
single MOSFETs transistor is 40mOhm
a threshold voltage of 2.6V
a 1200V drain to source voltage (Vdss)


C2M0040120D Applications


There are a lot of Cree/Wolfspeed
C2M0040120D applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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