Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IXTH16P60P

  • IXTH16P60P - MOSFET (Metal Oxide) P-Channel Tube 720m Ω @ 500mA, 10V ±20V 5120pF @ 25V 92nC @ 10V 600V TO-247-3
  • IXTH16P60P - MOSFET (Metal Oxide) P-Channel Tube 720m Ω @ 500mA, 10V ±20V 5120pF @ 25V 92nC @ 10V 600V TO-247-3

IXTH16P60P

IXTH16P60P

IXYS

MOSFET (Metal Oxide) P-Channel Tube 720m Ω @ 500mA, 10V ±20V 5120pF @ 25V 92nC @ 10V 600V TO-247-3

SOT-23

IXTH16P60P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PolarP™
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 460W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation460W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 720m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 16A
JEDEC-95 Code TO-268AA
Drain-source On Resistance-Max 0.72Ohm
Pulsed Drain Current-Max (IDM) 48A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 2500 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:667 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$8.88000$8.88
30$7.27767$218.3301
120$6.56750$788.1
510$5.50251$2806.2801

IXTH16P60P Product Details

IXTH16P60P Description


The IXTH16P60P is a PolarPTM Power MOSFET



IXTH16P60P Features


  • International standard packages

  • Avalanche Rated

  • Rugged PolarPTM process z Low package inductance

    - easy to drive and protect



IXTH16P60P Applications


  • High side switching

  • Push-pull amplifiers

  • DC Choppers

  • Current regulators

  • Automatic test equipment


Related Products

Similar Transistors - FETs, MOSFETs - Single from IXYS and other manufacturers

IXTL2N470 - MOSFET N-CH
IXYS

IXTL2N470

IXFB300N10P - MOSFET N-CH 100V 300A PLUS264
IXYS

IXFB300N10P

DMN65D8LFB-7 - MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3 Ω @ 115mA, 10V ±20V 25pF @ 25V 60V 3-UFDFN
Diodes Incorporated

DMN65D8LFB-7

IXFX64N60P - MOSFET (Metal Oxide) N-Channel Tube 96m Ω @ 500mA, 10V ±30V 12000pF @ 25V 200nC @ 10V TO-247-3
IXYS

IXFX64N60P

IXFK150N30X3 - 300V/150A ULTRA JUNCTION X3-CLAS
IXYS

IXFK150N30X3

TK6Q65W,S1Q - MOSFET N-CH 650V 5.8A IPAK-OS
Toshiba Semiconductor and Storage

TK6Q65W,S1Q

SPD30N03S2L20GBTMA1 - Trans MOSFET N-CH 30V 30A
Infineon Technologies

SPD30N03S2L20GBTMA1

DMN2050L-7 - MOSFET N-CH 20V 5.9A SOT23-3
Diodes Incorporated

DMN2050L-7

IRFIBE20GPBF - MOSFET (Metal Oxide) N-Channel Tube 6.5Ohm @ 840mA, 10V ±20V 530pF @ 25V 38nC @ 10V 800V TO-220-3 Full Pack, Isolated Tab
Vishay Siliconix

IRFIBE20GPBF

APT10026JLL - Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227
Microsemi Corporation

APT10026JLL

View All Related Products

Get Subscriber

Enter Your Email Address, Get the Latest News