IXTH16P60P

new-10%

Manufacturer part number:IXTH16P60P

Manufacturer:IXYS

Description:MOSFET (Metal Oxide) P-Channel Tube 720m Ω @ 500mA, 10V ±20V 5120pF @ 25V 92nC @ 10V 600V TO-247-3

Case Package:SOT-23

Datasheet:IXTH16P60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PolarP™
Published	2008
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	460W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	460W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	720m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	16A
JEDEC-95 Code	TO-268AA
Drain-source On Resistance-Max	0.72Ohm
Pulsed Drain Current-Max (IDM)	48A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	2500 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant