Welcome to Hotenda.com Online Store!

logo
userjoin
Home

C2M0080120D

C2M0080120D

C2M0080120D

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Bulk 98mOhm @ 20A, 20V +25V, -10V 950pF @ 1000V 62nC @ 5V 1200V TO-247-3

SOT-23

C2M0080120D Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series C2M™
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Power Dissipation-Max 192W Tc
Element Configuration Single
Power Dissipation 208W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Turn-Off Delay Time 23.2 ns
Continuous Drain Current (ID) 31.6A
Threshold Voltage 3.2V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 1.2kV
Input Capacitance 950pF
Drain to Source Resistance 80mOhm
Rds On Max 98 mΩ
Nominal Vgs 1.7 V
Height 21.1mm
Length 16.13mm
Width 5.21mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $17.50000 $17.5
C2M0080120D Product Details

C2M0080120D Overview


The maximum input capacitance of this device is 950pF @ 1000V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 31.6A.When VGS=1.2kV, and ID flows to VDS at 1.2kVVDS, the drain-source breakdown voltage is 1.2kV in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 23.2 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 80mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3.2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 1200V in order to operate.Using drive voltage (20V), this device helps reduce its power consumption.

C2M0080120D Features


a continuous drain current (ID) of 31.6A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 23.2 ns
single MOSFETs transistor is 80mOhm
a threshold voltage of 3.2V
a 1200V drain to source voltage (Vdss)


C2M0080120D Applications


There are a lot of Cree/Wolfspeed
C2M0080120D applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Related Part Number

IXTR102N65X2
IXTR102N65X2
$0 $/piece
EPC2014C
EPC2014C
$0 $/piece
FDPF4N60NZ
FDPF4N60NZ
$0 $/piece
NVD5C632NLT4G
IRFR420
IRFR420
$0 $/piece
IXFX240N15T2
IXFX240N15T2
$0 $/piece
BUK968R3-40E,118

Get Subscriber

Enter Your Email Address, Get the Latest News