BUK968R3-40E,118

new-10%

Manufacturer part number:BUK968R3-40E,118

Manufacturer:NXP USA Inc.

Description:Trans MOSFET N-CH 40V 75A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:BUK968R3-40E,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	3
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	96W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	20.9nC @ 5V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±10V
Drain Current-Max (Abs) (ID)	75A
Drain-source On Resistance-Max	0.0079Ohm
Pulsed Drain Current-Max (IDM)	319A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	43.9 mJ
RoHS Status	ROHS3 Compliant