Automotive, AEC-Q100, AL-J Memory IC Automotive, AEC-Q100, AL-J Series
SOT-23
S29AL008J70BFA010 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
48-VFBGA
Surface Mount
YES
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Series
Automotive, AEC-Q100, AL-J
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
HTS Code
8542.32.00.51
Technology
FLASH - NOR
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
3V
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PBGA-B48
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
8Mb 1M x 8 512K x 16
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Memory Interface
Parallel
Organization
512KX16
Memory Width
16
Write Cycle Time - Word, Page
70ns
Memory Density
8388608 bit
Access Time (Max)
70 ns
Programming Voltage
3V
Alternate Memory Width
8
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
338
$1.65817
$560.46146
S29AL008J70BFA010 Product Details
S29AL008J70BFA010 Overview
As far as memory types are concerned, Non-Volatile is considered to be its memory type. Case Tray is available. The 48-VFBGA case contains it. A memory chip with a capacity of 8Mb 1M x 8 512K x 16 is used on this device. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. A wide operating temperature range makes this device ideal for a variety of demanding applications. It is supplied votage within 2.7V~3.6V. It is recommended that the mounting type be Surface Mount. On the chip, there are 48 terminations. This part supports as many as 1 functions for the comprehensive working procedure. In order to power this memory device, 3V will be necessary. Automotive, AEC-Q100, AL-J series memory ics play a crucial role in the target applications of this part. A programming voltage of 3V is required to change a nonvolatile memory array's state.
S29AL008J70BFA010 Features
Package / Case: 48-VFBGA
S29AL008J70BFA010 Applications
There are a lot of Cypress Semiconductor Corp S29AL008J70BFA010 Memory applications.