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S29GL01GS11DHB020

S29GL01GS11DHB020

S29GL01GS11DHB020

Cypress Semiconductor Corp

Automotive, AEC-Q100, GL-S Memory IC Automotive, AEC-Q100, GL-S Series 9mm mm

SOT-23

S29GL01GS11DHB020 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tray
Series Automotive, AEC-Q100, GL-S
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PBGA-B64
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 1Gb 64M x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 110ns
Memory Format FLASH
Memory Interface Parallel
Organization 128MX8
Memory Width 8
Write Cycle Time - Word, Page 60ns
Memory Density 1073741824 bit
Programming Voltage 3V
Height Seated (Max) 1.4mm
Length 9mm
Width 9mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
260 $11.73688 $3051.5888
S29GL01GS11DHB020 Product Details

S29GL01GS11DHB020 Overview


There is a memory type Non-Volatile for this type of device. It is available in a case with a Tray shape. It is available in 64-LBGA case. A memory chip with a capacity of 1Gb 64M x 16 is used on this device. There is a mainstream memory format used by this device, which is called FLASH-format memory. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. There is a voltage range of 2.7V~3.6V for the supply voltage. Its recommended mounting type is Surface Mount. A total of 64 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. A voltage of 3V is required for the operation of this memory device. This part, which belongs to the Automotive, AEC-Q100, GL-S series of memory devices, plays an important role in its target applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.

S29GL01GS11DHB020 Features


Package / Case: 64-LBGA

S29GL01GS11DHB020 Applications


There are a lot of Cypress Semiconductor Corp S29GL01GS11DHB020 Memory applications.

  • servers
  • graphics card
  • personal digital assistants
  • Camcorders
  • personal computers
  • networks
  • eSRAM
  • workstations,
  • eDRAM
  • mainframes

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