Automotive, AEC-Q100, GL-S Memory IC Automotive, AEC-Q100, GL-S Series 9mm mm
SOT-23
S29GL01GS11DHB020 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
64-LBGA
Surface Mount
YES
Operating Temperature
-40°C~105°C TA
Packaging
Tray
Series
Automotive, AEC-Q100, GL-S
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
64
HTS Code
8542.32.00.51
Technology
FLASH - NOR
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
1mm
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
S-PBGA-B64
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
1Gb 64M x 16
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Access Time
110ns
Memory Format
FLASH
Memory Interface
Parallel
Organization
128MX8
Memory Width
8
Write Cycle Time - Word, Page
60ns
Memory Density
1073741824 bit
Programming Voltage
3V
Height Seated (Max)
1.4mm
Length
9mm
Width
9mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
260
$11.73688
$3051.5888
S29GL01GS11DHB020 Product Details
S29GL01GS11DHB020 Overview
There is a memory type Non-Volatile for this type of device. It is available in a case with a Tray shape. It is available in 64-LBGA case. A memory chip with a capacity of 1Gb 64M x 16 is used on this device. There is a mainstream memory format used by this device, which is called FLASH-format memory. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. There is a voltage range of 2.7V~3.6V for the supply voltage. Its recommended mounting type is Surface Mount. A total of 64 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. A voltage of 3V is required for the operation of this memory device. This part, which belongs to the Automotive, AEC-Q100, GL-S series of memory devices, plays an important role in its target applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.
S29GL01GS11DHB020 Features
Package / Case: 64-LBGA
S29GL01GS11DHB020 Applications
There are a lot of Cypress Semiconductor Corp S29GL01GS11DHB020 Memory applications.