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S29GL01GS11TFB023

S29GL01GS11TFB023

S29GL01GS11TFB023

Cypress Semiconductor Corp

Automotive, AEC-Q100, GL-S Memory IC Automotive, AEC-Q100, GL-S Series 18.4mm mm

SOT-23

S29GL01GS11TFB023 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 56-TFSOP (0.724, 18.40mm Width)
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q100, GL-S
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 56
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 0.5mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G56
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 1Gb 64M x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 110ns
Memory Format FLASH
Memory Interface Parallel
Organization 128MX8
Memory Width 8
Write Cycle Time - Word, Page 60ns
Memory Density 1073741824 bit
Programming Voltage 3V
Height Seated (Max) 1.2mm
Length 18.4mm
Width 14mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $10.87619 $10.87619
S29GL01GS11TFB023 Product Details

S29GL01GS11TFB023 Overview


Non-Volatile is its memory type. It is available in a case with a Tape & Reel (TR) shape. It is available in 56-TFSOP (0.724, 18.40mm Width) case. A memory chip with a capacity of 1Gb 64M x 16 is used on this device. This device uses a FLASH-format memory, which is of mainstream design. With an extended designed operating temperature of -40°C~105°C TA, this device is capable of lots of demanding applications. It is supplied votage within 2.7V~3.6V. As far as the mounting type is concerned, Surface Mount is recommended. There are 56 terminations on the chip. In total, this part supports 1 functions. In order to function properly, this ic memory chip should be powered by a voltage of 3V. This part is part of the Automotive, AEC-Q100, GL-S series of memory devices, which play a key role in its target applications. Nonvolatile memory arrays require 3V programming voltages to change their states.

S29GL01GS11TFB023 Features


Package / Case: 56-TFSOP (0.724, 18.40mm Width)

S29GL01GS11TFB023 Applications


There are a lot of Cypress Semiconductor Corp S29GL01GS11TFB023 Memory applications.

  • hard disk drive (HDD)
  • telecommunications
  • Cache memory
  • Camcorders
  • servers
  • eDRAM
  • DVD disk buffer
  • mainframes
  • workstations,
  • multimedia computers

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