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S29GL01GT10DHI023

S29GL01GT10DHI023

S29GL01GT10DHI023

Cypress Semiconductor Corp

GL-T Memory IC GL-T Series 9mm mm

SOT-23

S29GL01GT10DHI023 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Series GL-T
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
JESD-30 Code S-PBGA-B64
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 1Gb 128M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 100ns
Memory Format FLASH
Memory Interface Parallel
Organization 64MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 1073741824 bit
Programming Voltage 2.7V
Height Seated (Max) 1.4mm
Length 9mm
Width 9mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,200 $8.40672 $16.81344
S29GL01GT10DHI023 Product Details

S29GL01GT10DHI023 Overview


Non-Volatile is the type of memory it has. It is supplied votage within Tape & Reel (TR). There is a 64-LBGA case embedded in it. This chip has an 1Gb 128M x 8 size of memory on it, so a lot of data can be stored on it. FLASH-format memory is used in this device, which is a mainstream design. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~85°C TA. A voltage of 2.7V~3.6V is possible to be applied to the supply. There is a recommended mounting type of Surface Mount for it. The chip has 64 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to power this memory device, 3V will be necessary. In its target applications, this memory ics plays an important role as a member of the GL-T series of memory devices. A programming voltage of 2.7V is required to change a nonvolatile memory array's state.

S29GL01GT10DHI023 Features


Package / Case: 64-LBGA

S29GL01GT10DHI023 Applications


There are a lot of Cypress Semiconductor Corp S29GL01GT10DHI023 Memory applications.

  • eSRAM
  • Camcorders
  • nonvolatile BIOS memory
  • cell phones
  • main computer memory
  • supercomputers
  • personal digital assistants
  • Cache memory
  • eDRAM
  • embedded logic

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