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S29GL064S80BHB040

S29GL064S80BHB040

S29GL064S80BHB040

Cypress Semiconductor Corp

GL-S Memory IC GL-S Series 8.15mm mm

SOT-23

S29GL064S80BHB040 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 48-VFBGA
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tray
Series GL-S
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 0.8mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B48
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 64Mb 8M x 8 4M x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 80ns
Memory Format FLASH
Memory Interface Parallel
Organization 4MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 67108864 bit
Screening Level AEC-Q100
Programming Voltage 3V
Alternate Memory Width 8
Height Seated (Max) 1mm
Length 8.15mm
Width 6.15mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.99000 $3.99
500 $3.9501 $1975.05
1000 $3.9102 $3910.2
1500 $3.8703 $5805.45
2000 $3.8304 $7660.8
2500 $3.7905 $9476.25
S29GL064S80BHB040 Product Details

S29GL064S80BHB040 Overview


In this case, the memory type of the device can be classified as Non-Volatile. It comes in a Tray. It is available in 48-VFBGA case. The memory size of the chip is 64Mb 8M x 8 4M x 16 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~105°C TA, this device is capable of lots of demanding applications. It is capable of handling a voltage supply of 2.7V~3.6V. The recommended mounting type for memory ics is Surface Mount. 48 terminations are planted on the chip. The comprehensive working procedure is supported by 1 functions in this part. The memory device is designed to be supplied with an 3V volt power supply in order to operate properly. GL-S series memory devices play an important role in the applications they target. A programming voltage of 3V is needed to alter the state of certain nonvolatile memory arrays.

S29GL064S80BHB040 Features


Package / Case: 48-VFBGA

S29GL064S80BHB040 Applications


There are a lot of Cypress Semiconductor Corp S29GL064S80BHB040 Memory applications.

  • mainframes
  • nonvolatile BIOS memory
  • graphics card
  • networks
  • eSRAM
  • supercomputers
  • cell phones
  • hard disk drive (HDD)
  • workstations,
  • DVD disk buffer

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