Automotive, AEC-Q100, GL-S Memory IC Automotive, AEC-Q100, GL-S Series 9mm mm
SOT-23
S29GL128S10DHB010 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
64-LBGA
Surface Mount
YES
Operating Temperature
-40°C~105°C TA
Packaging
Tray
Series
Automotive, AEC-Q100, GL-S
JESD-609 Code
e1
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
64
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8542.32.00.51
Technology
FLASH - NOR
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
1mm
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
S-PBGA-B64
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
128Mb 8M x 16
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Access Time
100ns
Memory Format
FLASH
Memory Interface
Parallel
Organization
16MX8
Memory Width
8
Write Cycle Time - Word, Page
60ns
Memory Density
134217728 bit
Programming Voltage
3V
Height Seated (Max)
1.4mm
Length
9mm
Width
9mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
260
$4.43823
$1153.9398
S29GL128S10DHB010 Product Details
S29GL128S10DHB010 Overview
A Non-Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. The file is embedded in a 64-LBGA case. It is estimated that the memory size on the chip is 128Mb 8M x 16. The device uses a mainstream FLASH-format memory. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. The recommended mounting type for this device is Surface Mount. On the chip, there are 64 terminations that are planted. In total, 1 functions are supported by this part. In order to function properly, this ic memory chip should be powered by a voltage of 3V. Among the Automotive, AEC-Q100, GL-S series of memory devices, this part is essential for its applications. 3V programming voltage is required to change the state of certain nonvolatile memory arrays.
S29GL128S10DHB010 Features
Package / Case: 64-LBGA
S29GL128S10DHB010 Applications
There are a lot of Cypress Semiconductor Corp S29GL128S10DHB010 Memory applications.