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S29GL128S10FHB010

S29GL128S10FHB010

S29GL128S10FHB010

Cypress Semiconductor Corp

Automotive, AEC-Q100, GL-S Memory IC Automotive, AEC-Q100, GL-S Series 13mm mm

SOT-23

S29GL128S10FHB010 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tray
Published 2016
Series Automotive, AEC-Q100, GL-S
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PBGA-B64
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 128Mb 8M x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 100ns
Memory Format FLASH
Memory Interface Parallel
Organization 16MX8
Memory Width 8
Write Cycle Time - Word, Page 60ns
Memory Density 134217728 bit
Programming Voltage 3V
Height Seated (Max) 1.4mm
Length 13mm
Width 11mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
180 $4.45533 $801.9594
S29GL128S10FHB010 Product Details

S29GL128S10FHB010 Overview


There is a Non-Volatile memory type associated with this device. The case comes in Tray size. The 64-LBGA case contains it. It is estimated that the memory size on the chip is 128Mb 8M x 16. As with most mainstream devices, this one uses FLASH-format memory. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. Its recommended mounting type is Surface Mount. As you can see from the diagram, the chip is planted with 64 terminations. There are 1 functions supported by this part as part of the comprehensive working process. In order to operate this memory device, it must be supplied with 3V of power. In its target applications, this memory ics plays an important role as a member of the Automotive, AEC-Q100, GL-S series of memory devices. Nonvolatile memory arrays require 3V programming voltages to change their states.

S29GL128S10FHB010 Features


Package / Case: 64-LBGA

S29GL128S10FHB010 Applications


There are a lot of Cypress Semiconductor Corp S29GL128S10FHB010 Memory applications.

  • data buffer
  • hard disk drive (HDD)
  • multimedia computers
  • graphics card
  • servers
  • mainframes
  • workstations,
  • main computer memory
  • supercomputers
  • cell phones

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