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S29GL512T11TFV010

S29GL512T11TFV010

S29GL512T11TFV010

Cypress Semiconductor Corp

GL-T Memory IC GL-T Series 18.4mm mm

SOT-23

S29GL512T11TFV010 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 56-TFSOP (0.724, 18.40mm Width)
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tray
Published 2016
Series GL-T
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 56
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 0.5mm
JESD-30 Code R-PDSO-G56
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 512Mb 64M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 110ns
Memory Format FLASH
Memory Interface Parallel
Organization 32MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 536870912 bit
Programming Voltage 2.7V
Alternate Memory Width 8
Height Seated (Max) 1.2mm
Length 18.4mm
Width 14mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.60000 $8.6
10 $7.91500 $79.15
25 $7.75120 $193.78
91 $7.72363 $702.85033
182 $6.92890 $1261.0598
273 $6.71879 $1834.22967
546 $6.38993 $3488.90178
1,001 $6.16612 $6.16612
S29GL512T11TFV010 Product Details

S29GL512T11TFV010 Overview


As far as its memory type goes, it falls into the Non-Volatile category. Case Tray is available. An embedded 56-TFSOP (0.724, 18.40mm Width) case surrounds memory ics. The chip has an 512Mb 64M x 8 memory. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Due to its wide temperature range of -40°C~105°C TA, this device is well suited to a wide range of applications that require high performance. It is supplied votage within 2.7V~3.6V. There is a recommended mounting type of Surface Mount for it. On the chip, there are 56 terminations. The comprehensive working procedure of this part involves 1 functions. The memory device designed for this application has been designed to be powered by an 3V power supply. Among the GL-T series of memory devices, this part is essential for its applications. A programming voltage of 2.7V is needed to alter the state of certain nonvolatile memory arrays.

S29GL512T11TFV010 Features


Package / Case: 56-TFSOP (0.724, 18.40mm Width)

S29GL512T11TFV010 Applications


There are a lot of Cypress Semiconductor Corp S29GL512T11TFV010 Memory applications.

  • personal digital assistants
  • cell phones
  • eDRAM
  • networking
  • printers
  • servers
  • workstations,
  • networks
  • graphics card
  • personal computers

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