Automotive, AEC-Q100, MS-2 Memory IC Automotive, AEC-Q100, MS-2 Series 11mm mm
SOT-23
S34MS04G200BHA003 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
63-VFBGA
Surface Mount
YES
Operating Temperature
-40°C~85°C TA
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q100, MS-2
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
63
HTS Code
8542.32.00.51
Technology
FLASH - NAND
Voltage - Supply
1.7V~1.95V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
1.8V
Terminal Pitch
0.8mm
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PBGA-B63
Supply Voltage-Max (Vsup)
1.95V
Supply Voltage-Min (Vsup)
1.7V
Memory Size
4Gb 512M x 8
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Memory Interface
Parallel
Organization
512MX8
Memory Width
8
Write Cycle Time - Word, Page
45ns
Memory Density
4294967296 bit
Programming Voltage
1.8V
Height Seated (Max)
1mm
Length
11mm
Width
9mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
S34MS04G200BHA003 Product Details
S34MS04G200BHA003 Overview
Non-Volatile is the type of memory it has. In addition, memory ics is available in a Tape & Reel (TR) case as well. In the case of 63-VFBGA, it is embedded within the case. A memory chip with a capacity of 4Gb 512M x 8 is used on this device. As with most mainstream devices, this one uses FLASH-format memory. A wide operating temperature range makes this device ideal for a variety of demanding applications. A supply voltage of 1.7V~1.95V can be applied to it. The recommended mounting type for memory ics is Surface Mount. 63 terminations are planted on the chip. For a comprehensive working procedure, this part supports as many as 1 functions. The memory device designed for this application has been designed to be powered by an 1.8V power supply. This part is part of the Automotive, AEC-Q100, MS-2 series of memory devices, which play a key role in its target applications. Nonvolatile memory arrays require 1.8V programming voltages to change their states.
S34MS04G200BHA003 Features
Package / Case: 63-VFBGA
S34MS04G200BHA003 Applications
There are a lot of Cypress Semiconductor Corp S34MS04G200BHA003 Memory applications.