Welcome to Hotenda.com Online Store!

logo
userjoin
Home

S40410081B1B2W003

S40410081B1B2W003

S40410081B1B2W003

Cypress Semiconductor Corp

e.MMC 1B1 Memory IC e.MMC 1B1 Series 18mm mm

SOT-23

S40410081B1B2W003 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 100-LBGA
Surface Mount YES
Number of Pins 100
Operating Temperature -25°C~85°C TA
Packaging Tape & Reel (TR)
Series e.MMC 1B1
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 100
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 8Gb 1G x 8
Memory Type Non-Volatile
Operating Mode SYNCHRONOUS
Clock Frequency 200MHz
Memory Format FLASH
Memory Interface Parallel
Organization 8GX8
Memory Width 8
Memory Density 68719476736 bit
Programming Voltage 3V
Alternate Memory Width 4
Height Seated (Max) 1.4mm
Length 18mm
Width 14mm
RoHS Status ROHS3 Compliant
S40410081B1B2W003 Product Details

S40410081B1B2W003 Overview


Its memory type can be classified as Non-Volatile. There is a Tape & Reel (TR) case available. 100-LBGA case encloses it. There is an 8Gb 1G x 8 memory capacity on the chip. This device utilizes a FLASH format memory which is of mainstream design. -25°C~85°C TA is an extended operating temperature range, making this device ideal for demanding applications. It is capable of handling a voltage supply of 2.7V~3.6V. It is recommended to mount it in the Surface Mount mounting type. A total of 100 terminations have been planted on the chip. There are 1 functions supported by this part as part of the comprehensive working process. In order to operate this memory device, it must be supplied with 3V of power. In the memory, there is a clock frequency rotation that ranges 200MHz. The memory device has an 100-pin package, which encloses it in a small package. Among the e.MMC 1B1 series of memory devices, this part is essential for its applications. A programming voltage of 3V is needed to alter the state of certain nonvolatile memory arrays.

S40410081B1B2W003 Features


Package / Case: 100-LBGA
100 Pins

S40410081B1B2W003 Applications


There are a lot of Cypress Semiconductor Corp S40410081B1B2W003 Memory applications.

  • cell phones
  • eDRAM
  • workstations,
  • servers
  • telecommunications
  • networking
  • printers
  • nonvolatile BIOS memory
  • supercomputers
  • hard disk drive (HDD)

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News