2DD2098R-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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2DD2098R-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
2DD2098R-13
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
220MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2DD2098
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
220MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 2V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 4A
Collector Emitter Breakdown Voltage
20V
Current - Collector (Ic) (Max)
5A
Transition Frequency
220MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.087040
$8.08704
10
$7.629283
$76.29283
100
$7.197437
$719.7437
500
$6.790035
$3395.0175
1000
$6.405693
$6405.693
2DD2098R-13 Product Details
2DD2098R-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 500mA 2V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100mA, 4A.The emitter base voltage can be kept at 6V for high efficiency.Parts of this part have transition frequencies of 220MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
2DD2098R-13 Features
the DC current gain for this device is 180 @ 500mA 2V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 100mA, 4A the emitter base voltage is kept at 6V a transition frequency of 220MHz
2DD2098R-13 Applications
There are a lot of Diodes Incorporated 2DD2098R-13 applications of single BJT transistors.