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2DD2098R-13

2DD2098R-13

2DD2098R-13

Diodes Incorporated

2DD2098R-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

2DD2098R-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Manufacturer Package Identifier 2DD2098R-13
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 220MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2DD2098
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 220MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 2V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 4A
Collector Emitter Breakdown Voltage 20V
Current - Collector (Ic) (Max) 5A
Transition Frequency 220MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.087040 $8.08704
10 $7.629283 $76.29283
100 $7.197437 $719.7437
500 $6.790035 $3395.0175
1000 $6.405693 $6405.693
2DD2098R-13 Product Details

2DD2098R-13 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 500mA 2V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100mA, 4A.The emitter base voltage can be kept at 6V for high efficiency.Parts of this part have transition frequencies of 220MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

2DD2098R-13 Features


the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 220MHz

2DD2098R-13 Applications


There are a lot of Diodes Incorporated 2DD2098R-13 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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