2N7002H-7

new-10%

Manufacturer part number:2N7002H-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 60V 0.17A SOT23-3

Case Package:SOT-23

Datasheet:2N7002H-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Manufacturer Package Identifier	2N7002H-7
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	HIGH RELIABILITY
HTS Code	8541.21.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	370mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	26pF @ 25V
Current - Continuous Drain (Id) @ 25°C	170mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.35nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Continuous Drain Current (ID)	170mA
Drain Current-Max (Abs) (ID)	0.17A
DS Breakdown Voltage-Min	60V
RoHS Status	ROHS3 Compliant