APT13005SU-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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APT13005SU-G1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2016
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
20W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
3.2A
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A 5V
Vce Saturation (Max) @ Ib, Ic
1V @ 750mA, 3A
Collector Emitter Breakdown Voltage
450V
Current - Collector (Ic) (Max)
3.2A
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
10V
Emitter Base Voltage (VEBO)
9V
Height
11.2mm
Length
8.2mm
Width
2.9mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.757036
$1.757036
10
$1.657581
$16.57581
100
$1.563756
$156.3756
500
$1.475242
$737.621
1000
$1.391738
$1391.738
APT13005SU-G1 Product Details
APT13005SU-G1 Overview
This device has a DC current gain of 8 @ 2A 5V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 750mA, 3A.With the emitter base voltage set at 9V, an efficient operation can be achieved.A transition frequency of 4MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 3.2A volts at Single BJT transistors maximum.
APT13005SU-G1 Features
the DC current gain for this device is 8 @ 2A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 750mA, 3A the emitter base voltage is kept at 9V a transition frequency of 4MHz
APT13005SU-G1 Applications
There are a lot of Diodes Incorporated APT13005SU-G1 applications of single BJT transistors.