BC807-25-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC807-25-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e0
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn85Pb15)
Subcategory
Other Transistors
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
BC807
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power - Max
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Max Breakdown Voltage
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
160
VCEsat-Max
0.7 V
Collector-Base Capacitance-Max
12pF
Height
1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
BC807-25-7 Product Details
BC807-25-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Parts of this part have transition frequencies of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.
BC807-25-7 Features
the DC current gain for this device is 160 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
BC807-25-7 Applications
There are a lot of Diodes Incorporated BC807-25-7 applications of single BJT transistors.