KSD526O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD526O Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Reach Compliance Code
compliant
Base Part Number
KSD526
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
30W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA 5V
Current - Collector Cutoff (Max)
30μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
4A
Transition Frequency
8MHz
Frequency - Transition
8MHz
KSD526O Product Details
KSD526O Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 500mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 300mA, 3A.8MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 80V.
KSD526O Features
the DC current gain for this device is 70 @ 500mA 5V the vce saturation(Max) is 1.5V @ 300mA, 3A a transition frequency of 8MHz
KSD526O Applications
There are a lot of ON Semiconductor KSD526O applications of single BJT transistors.