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KSD526O

KSD526O

KSD526O

ON Semiconductor

KSD526O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD526O Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Reach Compliance Code compliant
Base Part Number KSD526
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 30W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 5V
Current - Collector Cutoff (Max) 30μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 4A
Transition Frequency 8MHz
Frequency - Transition 8MHz
KSD526O Product Details

KSD526O Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 500mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 300mA, 3A.8MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 80V.

KSD526O Features


the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 300mA, 3A
a transition frequency of 8MHz

KSD526O Applications


There are a lot of ON Semiconductor KSD526O applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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