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BC857AT-7-F

BC857AT-7-F

BC857AT-7-F

Diodes Incorporated

BC857AT-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC857AT-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating -100mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC857AT
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 125
Height 750μm
Length 1.6mm
Width 800μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.352768 $0.352768
10 $0.332800 $3.328
100 $0.313962 $31.3962
500 $0.296191 $148.0955
1000 $0.279425 $279.425
BC857AT-7-F Product Details

BC857AT-7-F Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 2mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.There is a transition frequency of 100MHz in the part.As a result, it can handle voltages as low as 45V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC857AT-7-F Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz

BC857AT-7-F Applications


There are a lot of Diodes Incorporated BC857AT-7-F applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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