BC857AT-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC857AT-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-523
Number of Pins
3
Weight
2.012816mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
-100mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC857AT
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
125
Height
750μm
Length
1.6mm
Width
800μm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.352768
$0.352768
10
$0.332800
$3.328
100
$0.313962
$31.3962
500
$0.296191
$148.0955
1000
$0.279425
$279.425
BC857AT-7-F Product Details
BC857AT-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 2mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.There is a transition frequency of 100MHz in the part.As a result, it can handle voltages as low as 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857AT-7-F Features
the DC current gain for this device is 125 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is -100mA a transition frequency of 100MHz
BC857AT-7-F Applications
There are a lot of Diodes Incorporated BC857AT-7-F applications of single BJT transistors.