BCW65CLT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 100MHz.There is a breakdown input voltage of 32V volts that it can take.In extreme cases, the collector current can be as low as 800mA volts.
BCW65CLT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65CLT1G Applications
There are a lot of ON Semiconductor BCW65CLT1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
