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BC857BLP-7B

BC857BLP-7B

BC857BLP-7B

Diodes Incorporated

BC857BLP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC857BLP-7B Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 250mW
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC857BLP
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 250mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -650mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -100mA
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.945760 $4.94576
10 $4.665811 $46.65811
100 $4.401709 $440.1709
500 $4.152555 $2076.2775
1000 $3.917505 $3917.505
BC857BLP-7B Product Details

BC857BLP-7B Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at -100mA to achieve high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.This device can take an input voltage of 45V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC857BLP-7B Features


the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

BC857BLP-7B Applications


There are a lot of Diodes Incorporated BC857BLP-7B applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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