MMJT9435T3 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MMJT9435T3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
4
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
4
JESD-30 Code
R-PDSO-G4
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
3W
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 800mA 1V
Vce Saturation (Max) @ Ib, Ic
550mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
3A
Transition Frequency
110MHz
Frequency - Transition
110MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.14000
$0.14
500
$0.1386
$69.3
1000
$0.1372
$137.2
1500
$0.1358
$203.7
2000
$0.1344
$268.8
2500
$0.133
$332.5
MMJT9435T3 Product Details
MMJT9435T3 Overview
DC current gain in this device equals 125 @ 800mA 1V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 550mV @ 300mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
MMJT9435T3 Features
the DC current gain for this device is 125 @ 800mA 1V the vce saturation(Max) is 550mV @ 300mA, 3A a transition frequency of 110MHz
MMJT9435T3 Applications
There are a lot of Rochester Electronics, LLC MMJT9435T3 applications of single BJT transistors.