BC858A-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC858A-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC858
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Power - Max
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-650mV
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
Height
1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.492240
$6.49224
10
$6.124755
$61.24755
100
$5.778070
$577.807
500
$5.451010
$2725.505
1000
$5.142462
$5142.462
BC858A-7-F Product Details
BC858A-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 200MHz.A maximum collector current of 100mA volts can be achieved.
BC858A-7-F Features
the DC current gain for this device is 125 @ 2mA 5V a collector emitter saturation voltage of -650mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at 5V a transition frequency of 200MHz
BC858A-7-F Applications
There are a lot of Diodes Incorporated BC858A-7-F applications of single BJT transistors.