ZXTP749FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP749FTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Digi-Reel®
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
725mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP749
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
25V
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
35V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
3A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.081575
$0.081575
500
$0.059982
$29.991
1000
$0.049985
$49.985
2000
$0.045857
$91.714
5000
$0.042858
$214.29
10000
$0.039867
$398.67
15000
$0.038556
$578.34
50000
$0.037912
$1895.6
ZXTP749FTA Product Details
ZXTP749FTA Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 350mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
ZXTP749FTA Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 350mV @ 300mA, 3A the emitter base voltage is kept at 7V
ZXTP749FTA Applications
There are a lot of Diodes Incorporated ZXTP749FTA applications of single BJT transistors.