BCW66HTC Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 800mA to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.A transition frequency of 100MHz is present in the part.The maximum collector current is 800mA volts.

BCW66HTC Features

the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz

BCW66HTC Applications

There are a lot of Diodes Incorporated BCW66HTC applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting