BSS84DW-7-F

new-10%

Manufacturer part number:BSS84DW-7-F

Manufacturer:Diodes Incorporated

Description:MOSFET 2P-CH 50V 0.13A SC70-6

Case Package:SOT-23

Datasheet:BSS84DW-7-F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	6.010099mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	10Ohm
Subcategory	Other Transistors
Voltage - Rated DC	-50V
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-130mA
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	BSS84DW
Pin Count	6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	10 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10 Ω @ 100mA, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	45pF @ 25V
Drain to Source Voltage (Vdss)	50V
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	130mA
Threshold Voltage	-1.6V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.13A
Drain to Source Breakdown Voltage	-50V
Dual Supply Voltage	-50V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	-1.6 V
Min Breakdown Voltage	50V
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free