TIP49 SL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
TIP49 SL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
40W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max)
350V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
10MHz
TIP49 SL Product Details
TIP49 SL Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.This device displays a 350V maximum voltage - Collector Emitter Breakdown.
TIP49 SL Features
the DC current gain for this device is 30 @ 300mA 10V the vce saturation(Max) is 1V @ 200mA, 1A
TIP49 SL Applications
There are a lot of Central Semiconductor Corp TIP49 SL applications of single BJT transistors.