DCP56-16-13 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The part has a transition frequency of 200MHz.Single BJT transistor can be broken down at a voltage of 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
DCP56-16-13 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
DCP56-16-13 Applications
There are a lot of Diodes Incorporated DCP56-16-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
