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DCP69-25-13

DCP69-25-13

DCP69-25-13

Diodes Incorporated

DCP69-25-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DCP69-25-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DCP69
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage20V
Transition Frequency 200MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 5V
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2167 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.160800$5.1608
10$4.868679$48.68679
100$4.593094$459.3094
500$4.333107$2166.5535
1000$4.087837$4087.837

DCP69-25-13 Product Details

DCP69-25-13 Overview


This device has a DC current gain of 160 @ 500mA 1V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.In this part, there is a transition frequency of 200MHz.Breakdown input voltage is 20V volts.A maximum collector current of 1A volts can be achieved.

DCP69-25-13 Features


the DC current gain for this device is 160 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

DCP69-25-13 Applications


There are a lot of Diodes Incorporated DCP69-25-13 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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