DMG1016V-7

new-10%

Manufacturer part number:DMG1016V-7

Manufacturer:Diodes Incorporated

Description:MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563

Case Package:SOT-23

Datasheet:DMG1016V-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	3.005049mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	700mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	530mW
Terminal Position	DUAL
Terminal Form	FLAT
Base Part Number	DMG1016V
Pin Count	6
Reference Standard	AEC-Q101
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	530mW
Turn On Delay Time	5.1 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C	870mA 640mA
Gate Charge (Qg) (Max) @ Vgs	0.74nC @ 4.5V
Rise Time	8.1ns
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	20.7 ns
Turn-Off Delay Time	28.4 ns
Continuous Drain Current (ID)	640mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	6V
Drain Current-Max (Abs) (ID)	0.87A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	600μm
Length	1.7mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free