DMG3418L-7

new-10%

Manufacturer part number:DMG3418L-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 4A SOT23

Case Package:SOT-23

Datasheet:DMG3418L-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	DMG3418
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.4W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	1.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	464.3pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 4.5V
Rise Time	1.6ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	2 ns
Turn-Off Delay Time	10.3 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.06Ohm
Drain to Source Breakdown Voltage	30V
RoHS Status	ROHS3 Compliant