FCP190N60-GF102

new-10%

Manufacturer part number:FCP190N60-GF102

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V TO-220-3

Case Package:SOT-23

Datasheet:FCP190N60-GF102 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperFET® II
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Configuration	Single
Power Dissipation-Max	208W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	199m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20.2A Tc
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	20.2A
RoHS Status	ROHS3 Compliant