DMG6602SVT-7

new-10%

Manufacturer part number:DMG6602SVT-7

Manufacturer:Diodes Incorporated

Description:N & P Channel 30 V 60 mOhm Complementary Pair Enhancement Mode Mosfet-TSOT-23-6

Case Package:SOT-23

Datasheet:DMG6602SVT-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	95mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Max Power Dissipation	840mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMG6602
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	840mW
Turn On Delay Time	3 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.4A 2.8A
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	5ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	3 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	2.8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3.4A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	13A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate, 4.5V Drive
Height	1mm
Length	2.9mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free