SI1016CX-T1-GE3

new-10%

Manufacturer part number:SI1016CX-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SI1016CX-T1-GE3 Dual MOSFET, N and P Channel, 600 mA, 20 V, 0.33 ohm, 4.5 V, 400 mV

Case Package:SOT-23

Datasheet:SI1016CX-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	8.193012mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	Other Transistors
Max Power Dissipation	220mW
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	220mW
Turn On Delay Time	11 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	396m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	43pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	2nC @ 4.5V
Rise Time	16ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	11 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	600mA
Threshold Voltage	400mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free