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DMG7N65SJ3

DMG7N65SJ3

DMG7N65SJ3

Diodes Incorporated

MOSFET BVDSS: 501V 650V TO251

SOT-23

DMG7N65SJ3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Package / Case TO-251-3, IPak, Short Leads
Operating Temperature-55°C~150°C TJ
PackagingTube
Series Automotive, AEC-Q101
JESD-609 Code e3
Part StatusActive
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 125W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 886pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:2994 items

Pricing & Ordering

QuantityUnit PriceExt. Price
75$0.96373$72.27975

About DMG7N65SJ3

The DMG7N65SJ3 from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET BVDSS: 501V 650V TO251.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DMG7N65SJ3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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