SPD02N60C3BTMA1

new-10%

Manufacturer part number:SPD02N60C3BTMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 1.8A DPAK

Case Package:SOT-23

Datasheet:SPD02N60C3BTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	25W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.8A Tc
Gate Charge (Qg) (Max) @ Vgs	12.5nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	1.8A
Drain-source On Resistance-Max	3Ohm
Pulsed Drain Current-Max (IDM)	5.4A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	50 mJ
RoHS Status	RoHS Compliant