DMG9N65CT

new-10%

Manufacturer part number:DMG9N65CT

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 650V 9A TO220AB

Case Package:SOT-23

Datasheet:DMG9N65CT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	165W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	39 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.3 Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2310pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	29ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	122 ns
Continuous Drain Current (ID)	9A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	650V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant