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FQP5N80

FQP5N80

FQP5N80

ON Semiconductor

FQP5N80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

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FQP5N80 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 2.6Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 4.5A
Number of Elements 1
Voltage 800V
Power Dissipation-Max 140W Tc
Element Configuration Single
Current 48A
Power Dissipation 140W
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.8A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 60ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 4.8A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Dual Supply Voltage 800V
Input Capacitance 1.25nF
Drain to Source Resistance 2.6Ohm
Rds On Max 2.6 Ω
Nominal Vgs 5 V
Height 9.4mm
Length 10.1mm
Width 4.7mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.88000 $0.88
500 $0.8712 $435.6
1000 $0.8624 $862.4
1500 $0.8536 $1280.4
2000 $0.8448 $1689.6
2500 $0.836 $2090
FQP5N80 Product Details

FQP5N80     Description


These N-channel enhanced power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for high efficiency switching mode power supply.

 


FQP5N80       Features


? 4.8A, 800V, RDS(on) = 2.6? @VGS = 10 V

? Low gate charge ( typical 25 nC)

? Low Crss ( typical 11 pF)

? Fast switching

? 100% avalanche tested

? Improved dv/dt capability

 

FQP5N80       Applications


 high efficiency switching mode power supply.

 


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