DMMT5551S-7-F

new-10%

Manufacturer part number:DMMT5551S-7-F

Manufacturer:Diodes Incorporated

Description:Bipolar Transistors - BJT NPN BIPOLAR

Case Package:SOT-23

Datasheet:DMMT5551S-7-F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Number of Pins	6
Weight	29.993795mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Frequency	300MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMMT5551
Pin Count	6
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Power Dissipation	300mW
Transistor Application	SWITCHING
Gain Bandwidth Product	300MHz
Transistor Type	2 NPN (Dual) Matched Pair
Collector Emitter Voltage (VCEO)	160V
Max Collector Current	200mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	50nA ICBO
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage	160V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	200mV
Max Breakdown Voltage	160V
Collector Base Voltage (VCBO)	180V
Emitter Base Voltage (VEBO)	6V
Height	1.1mm
Length	3mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant